Öffnet in neuem Fenster Opens in a new window Öffnet externe Seite Opens an external site Öffnet externe Seite in neuem Fenster Opens an external site in a new window

Institute Silicon Photovoltaics

Electron Backscatter Diffraction (EBSD)

  • information about the orientation  of the unit cell  in the crystals
  • backscattered electrons are incident on lattice planes  and are diffracted
  • from these diffraction patterns the crystal orientation can be calculated
  • it is carried out with a EDAX-TSL equipment  with the highest scanning rate of 75 fps -TSL
  • structure investigations on the micro scale, texture analyses, phase identification
  • the samples have to be very planar and smooth
  • the penetration depth is only a few nm
enlarged view

Distribution of the angles between the grains – preferential angles for example for twins visible

 

 

enlarged view

Orientation mapping of a Silicon layer after laser crystallization, {100} preferred orientation by red grains observable

Inverse pole figure of the same layer, red colour means maximum counts of orientations and blue minimal