Fuhs, W. ; Laades, A. ; Maydell, K.v. ; Stangl, R. ; Gusev, O.B. ; Terukov, E.I. ; Kazitsyna-Baranovski, S. ; Weiser, G.: Band-edge electroluminescence from amorphous/crystalline silicon heterostructure solar cells. Journal of Non-Crystalline Solids 352 (2006), p. 1884-1887
10.1016/j.jnoncrysol.2005.10.051
Abstract:
Heterojunction solar cells with thin emitter layers of a-Si:H(n+) on monocrystalline p-type silicon exhibit electroluminescence with power efficiencies of up to 0.3%. Above 50 K the emission is intrinsic with no differences between various samples and the integrated intensity increases with temperature different from the expectation for an ideal diode. At T < 40 K the behavior of various samples differs appreciably. Numerical simulations demonstrate a strong influence of the density of interface states, which determines the emission intensity and its temperature dependence. The results show that good performance as LED is related to a high value of the open circuit voltage.