Open Accesn Version

Abstract:
The main focus of this thesis is on metal oxide layers and their possible implementation as carrier selective contacts in silicon heterojunction (SHJ) solar cells. The dominant topics in this work are the development of deposition processes for such metal oxide layers and their further analysis, covering layer composition, layer properties and their interface with perovskite, crystalline silicon (c-Si), or amorphous hydrogenated silicon (aSi:H). Their implementation in solar cell devices, as well as their impact on solar cell performance, were also assessed. Chapters 4 and 5 focus on electron-transport layers for SHJ solar cells deposited by atomic layer deposition (ALD). Additionally, a discussion of a post-treatment process for spin-coated tin oxide (SnO2) layers for perovskite solar cells is presented in chapter 4. Chapter 6 gives a brief overview of metal oxides as electron-selective contacts and discussed the possibilities and issues of implementing high work function transition metal oxide (TMO) layers in SHJ devices. Furthermore, it presented a general outlook for ALD in SHJ and perovskite solar cells.