Müller, M.; Abou-Ras, D.; Bertram, F.; Christen, J.; Rissom, T.: Symmetry dependent optoelectronic properties of grain boundaries in polycrystalline Cu(In,Ga)Se2 thin films. Journal of Applied Physics 115 (2014), p. 023514
10.1063/1.4861149
Abstract:
In a correlative study applying electron backscatter diffraction as well as spatially and spectrally resolved cathodoluminescence spectroscopy at low temperatures of about 5 K, the symmetry-dependent optoelectronic properties of grain boundaries (GBs) in Cu(In,Ga)Se2 thin films were investigated. We find that GBs with lower symmetries tend to show a distinct spectral red shift of about 10 meV and a weak influence on the emission intensity. These behaviors are not detected at high-symmetry Σ3 GBs, or at least in a strongly reduced way. The investigations in the present work help to clarify the ambivalent properties reported for GBs in Cu(In,Ga)Se2.