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  Solovan, M.M.; Gavaleshko, N.M.; Brus, V.V.; Mostovyi, A.I.; Maryanchuk, P.D.; Tresso, E.: Fabrication and investigation of photosensitive MoO_x/n-CdTe heterojunctions. Semiconductor Science and Technology 31 (2016), p. 105006/1-6

10.1088/0268-1242/31/10/105006

Abstract:
MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The obtained heterojunctions possessed sharply defined rectifying properties with the rectification ration RR∼106. The temperature dependences of the height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases. The analysis of capacitance-voltage (C–V ) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance.