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  Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrsporn, R.B.: Plasma-enhanced atomic-layer-deposited MoO_x emitters for silicon heterojunction solar cells. Applied Physics A 120 (2015), p. 811-816

10.1007/s00339-015-9280-3
Open Access Version

Abstract:
A method for the deposition of molybdenum oxide (MoOx) with high growth rates at temperatures below 200°C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the overstoichiometric MoOx films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed.