Warzecha, M.; Owen, J.I.; Wimmer, M.; Ruske, F.; Hotovy, J.; Hüpkes, J.: High mobility annealing of Transparent Conductive Oxides. In: E-MRS 2011 FALL SYMPOSIUM I: ADVANCES IN TRANSPARENT ELECTRONICS, FROM MATERIALS TO DEVICES III, 2012 (IOP Conference Series-Materials Science and Engineering ; 34), p. 012004/1-15
10.1088/1757-899X/34/1/012004
Open Access Version (externer Anbieter)
Abstract:
To improve electrical properties a high temperature annealing treatment was applied to several transparent conductive oxides (TCO), namely tin doped indium oxide (ITO), Ga- or Al- doped ZnO (ZnO:Al/Ga), ion beam assisted deposited (IBAD) ZnO:Ga and Ga doped zinc magnesium oxide (ZnMgO:Ga). All these films were grown by magnetron sputtering. During the annealing process all TCO films were capped with 50 nm of amorphous silicon in order to protect the films from environmental impact. Increase in mobility up to 72 cm2/Vs and low resistivity of 1.6 × 10−4 Ωcm was achieved for ZnO:Al after annealing at 650°C for 24 h. Independent of the deposition conditions and doping or alloying material almost all ZnO based films show a consistent improvement in mobility. Also for ITO films a decrease in resistivity with partially improved mobility was found after annealing. However, not all ITO films show consistent improvement, but carrier density above 1021 cm−3 while ZnO films show no clear trend for carrier density but a remarkable increase in mobility. Thus we propose the healing of defects and the activation of donors to be most significant effects for ZnO and ITO films, respectively.