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  Grzanna, J.; Notz, T.; Lewerenz, H.J.: Stress induced one-dimensional model for current oscillations at the Si/electrolyte contact. Phys. Status Solidi C 6 (2009), p. 1639-1643

10.1002/pssc.200881028

Abstract:
A cellular automata is introduced to model the locally resolved oxide thickness, the stress, and the etching rate dynamics at the silicon electrolyte contact along a macroscopically long line (1 mm). Short- and long-range interaction mechanisms are considered to achieve current oscillations. Extended chronoamperometric oscillations are obtained but finally, the oscillations become increasingly damped for the case of a locally acting stress and a locally varying etching rate. The additional incorporation of a small oscillating and long-range interacting nominal etching rate into the model leads to sustained oscillations.