Dermenji, L.; Curmei, N.; Guc, M.; Gurieva, G.; Rusu, M.; Fedorov, V.; Bruc, L.; Sherban, D.; Schorr, S.; Simashkevich, A.; Arushanov, E.: Effects of annealing on elemental composition and quality of CZTSSe thin films obtained by spray pyrolysis. Surface Engineering and Applied Electrochemistry 52 (2016), p. 509-514
10.3103/S1068375516060041
Abstract:
The spray pyrolysis was used for the deposition of Cu2ZnSn(S, Se)4 (CZTSSe) kesterite thin films. The basic spray pyrolysis solution was prepared from two precursor solutions containing thiourea and cooled to a temperature near 1°C, which leads to minimizing the number of insoluble hydrates of copper chloride. The optimal substrate temperature was 350°C and the distance from the sprayer nozzle 30 cm. The as-deposited Cu2ZnSnS4 layers were annealed in S2 atmosphere for the compensation of the sulfur deficiency and with the addition of Sn in order to avoid tin loss. Cu2ZnSn(S, Se)4 thin films were obtained after the annealing of as-deposited films in the (S2 + Se2) atmosphere. The surface morphology and composition of obtained thin films were investigated using the energy dispersive X-ray (EDX) microanalysis and Raman spectroscopy measurements. The structural characterization by the grazing incidence X-ray diffraction (GIXRD) showed the presence of Cu2–xS phases in all of the annealed thin films. For the Se/(S + Se) ratio of the thin films annealed in the (S + Se) atmosphere was established from EDX measurements and analysis of GIXRD data, the results are in satisfactory agreement.