Brus, V.V.; Babichuk, I.S.; Orletskyi, I.G.; Maryanchuk, P.D.; Yukhymchuk, V.O.; Dzhagan, V.M.; Yanchuk, I.B.; Solovan, M.M.; Babichuk, I.V.: Raman spectroscopy of Cu-Sn-S ternary compound thin films prepared by the low-cost spray-pyrolysis technique. Applied Optics 55 (2016), p. B158-B162
10.1364/AO.55.00B158
Abstract:
Cu-Sn-S (CTS) thin films were deposited onto bare and molybdenum (Mo) coated glass substrates by means of the spray pyrolysis technique under different conditions. The CTS thin films obtained are shown, by means of Raman spectroscopy, to consist of two main phases: Cu2SnS3 and Cu3SnS4 as well as of the secondary phase of Cu2−xS. The electrical conductivity of the spray-deposited p-type CTS thin films under investigation is determined by two shallow acceptor levels: Ev 0.07 eV at T < 334 K and Ev 0.1 eV at T > 334 K. The material of the CTS thin films was established to be a direct-band semiconductor with the bandgap Eg 1.89 eV. The SEM and x-ray energy dispersive analysis show the surface and cross section of the CTS thin film deposited onto molybdenum-coated glass ceramics substrate with the actual atomic ratios of Cu:Sn:S being 2.9:1:2.64, which is in good agreement with the Raman spectra. Also, a small content of residual Cl atoms was found in the CTS thin films under investigation as the by-product of the pyrolytic reactions.