Neitzert, H.C.; Palma, L.; Denker, A.; Bundesmann, J.; Dittwald, A.; Lang, F.: Effects of proton irradiation on optocouplers wih bipolar and MOSFET technologies, a comparison of in-situ and ex-situ results. In: Bindu, V. ... [Ed.] : Proceedings of Fourth International Conference on Communication, Computing and Electronics Systems : ICCCES 2022Singapore: Springer, 2023 (Lecture Notes in Electrical Engineering ; 977). - ISBN 978-981-19-7753-4, p. 661-670
10.1007/978-981-19-7753-4_50
Abstract:
The properties of two different types of optocouplers, a conventional bipolar one with phototransistor output stage and a photorelay with power MOS output stage, have been determined before, during, and after irradiation with 68 meV protons with a fluence of up to 1e12 protons/cm2. In-situ measurements of the radiation-induced current of the input LEDs and in the case of the bipolar optocoupler also of the current-transfer-ratio of the device enabled a separate evaluation of input and output device degradation. A moderate degradation of the LED performance is observed for both devices, but in the case of the MOS-based photorelay, the most important overall device parameters are still within the specifications even for the highest irradiation level, while for the coupler with bipolar phototransistor a more than one order of magnitude decrease of the current-transfer-ratio is already observed for moderate fluences. This strong degradation is mainly due to the strong loss of photo-generated charge carriers with increasing fluence.