Ligorio, G.; Nardi, M.V.; Koch, N.: Lithography-Free Miniaturization of Resistive Nonvolatile Memory Devices to the 100 nm Scale by Glancing Angle Deposition. Nano Letters 17 (2017), p. 1149-1153
10.1021/acs.nanolett.6b04794
Abstract:
The scaling of nonvolatile memory (NVM) devices based on resistive fi lament switching to below a 100 nm 2 footprint area without employing cumbersome lithog- raphy is demonstrated. Nanocolumns of the organic semi- conductor 4,4-bis[ N -(1-naphthyl)- N -phenyl-amino]diphenyl ( α -NPD) were grown by glancing angle deposition on a silver electrode. Individual NVM devices were electrically charac- terized by conductive atomic force microscopy with the tip of a conductive cantilever serving as second electrode. The resistive switching mechanism is unambiguously attributed to Ag fi lament formation between the electrodes. This sets the upper limit for the fi lament diameter to well below 100 nm. Full functionality of these NVM nanodevices is evidenced, revealing a potential memory density of >1 GB/cm 2 in appropriate architectures.