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  Pookpanratana, S.; Repins, I.; Bär, M.; Félix, R.; Blum, M.; Weinhardt, L.; Yang, W.; Denlinger, J.D.; Contreras, M.A.; Heske, C.: Spectroscopic analysis of the chemical structure at the CdS/Cu(In,Ga)Se₂ interface in high-efficiency solar cell devices. In: 34th IEEE Photovoltaic Specialists Conference (PVSC 2009) 7-12 June 2009, Philadelphia, PA, USA , 2009. - ISBN 978-1-4244-2949-3, p. 1060-1063

10.1109/PVSC.2009.5411203

Abstract:
High-efficiency Cu(In1-xGax)Se2 (CIGSe)-based solar cells utilize a CdS buffer layer between the window and the chalcopyrite absorber. Soft x-ray spectroscopies were employed to investigate the chemical properties of the CdS/CIGSe interface and its dependence on the details of the chemical bath deposition (CBD) of CdS. We have investigated the CdS/CIGSe interface after various CdS CBD times (0, 4, and 12.5 minutes). We find evidence for the presence of Cd(OH)2 at the CdS/CIGSe surface for the thickest CdS sample.