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  Huo, F.; Hartig, M.; Otto Seibertz, B.B.; Alktash, N.; Muydninov, R.; Wang, C.; Gao, P.; Szyszka, B.: Protocol for depositing transparent conductive Ta-doped SnO₂ film by hollow cathode gas flow sputtering technology. STAR Protocols 5 (2024), p. 103489/1-14

10.1016/j.xpro.2024.103489
Open Access Version

Abstract:
Transparent conductive Ta-doped SnO2 (SnO2: Ta) thin film with low surface roughness, low resistivity, and high carrier concentration is one potential alternative of commercial transparent conductive oxides (TCOs). Here, we present a protocol for fabricating tin oxide films by hollow cathode gas flow sputtering technology. We describe steps for preparing and cleaning substrate, and film deposition process on the fresh uncorroded float glass substrate. We then detail procedures for measuring the optical and electrical properties of the film.