Conrad, E. ; Maydell, K.v. ; Angermann, H. ; Schubert, C. ; Schmidt, M.: Optimization of interface properties in a-Si:H/c-Si heterojunction solar cells. In: 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion : Waikoloa, Hawaii, May 7-12, 2006 : WCPEC-4Piscataway, NJ: IEEE, 2006. - ISBN 1-4244-0016-3, p. 1263-1266
Abstract:
We report on the optimization of hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction solar cells which were completely processed at temperatures below 230 °C. Efficient solar cells based on both n-type and on p-type c-Si substrates were performed. In contrast to the approach from Sanyo [1] no additional a-Si:H(i) buffer layer was used. Instead the conditions of the amorphous silicon preparation by conventional plasma enhanced chemical vapor deposition (PECVD) were optimized and several wet- or plasma chemical treatments were applied to improve the interface properties. The highest efficiencies so far are 17.4 % on p-type c-Si wafers and 19.8 % on n-type c-Si wafers.