Unold, T.; Enzenhofer, T.; Sieber, I.; Ellmer, K.: Reactive magnetron sputtering of CuInS2 solar cells - the influence of the deposition conditions on structural and electronic properties and solar cell efficiency. In: Technical digest / 15th International Photovoltaic Science and Engineering Conference (PVSEC-15) : October 10 - 15, 2005, Shanghai, ChinaShanghai: Shanghai Jiao Tong Univ., 2005. - ISBN 7-5323-8225-7, p. 503-504
Abstract:
CuInS2 thin films have been prepared by reactive magnetron sputtering from metallic copper and indium targets in an argon-hydrogen-sulfide atmosphere (Ar/H2S). The influence of the total sputtering pressure in the range from 0.5 to 2 Pa, the Cu-to-In ratio (0.9 to 2.3) and the substrate temperature in the range from 350 to 500 °C were investigated. For substrate temperatures higher than 450 °C the films consist of the chalcopyrite phase of CuInS2, while at lower temperatures also the CuAu-type ordered phase of copper indium disulfide can be obseved by XRD and Raman spectroscopy. Solar cells prepared from the best CuInS2 absorber films showed efficiencies higher than 10 %, a value, which is comparable to the best cells prepared by the sequential process, i.e. by sulfurization of Cu/In sandwich films. This result is promising for a prospective large-scale magnetron sputter deposition process for the complete solar cell.