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  Gorka, B. ; Dogan, P. ; Sieber, I. ; Fenske, F. ; Gall, S.: Low temperature epitaxy of silicon by electron beam evaporation. Thin Solid Films 515 (2007), p. 7643-7646

10.1016/j.tsf.2006.11.161

Abstract:
In this paper we report on homoepitaxial growth of Si thin films at substrate temperatures Ts=500-650 °C under non-ultra high vacuum conditions by using electron beam evaporation. Si films were grown at high deposition rates on monocrystalline Si wafers with (100), (110) and (111) orientations. The ultra-violet-visible reflectance spectra of the films exhibit a dependence on Ts and on substrate orientation. To determine the structural quality of the films in more detail Secco etch experiments were applied. No etch pits were found on the films grown on (100) oriented wafers. However, on films grown on (110) and (111) oriented wafers different types of etch pits could be detected. Films were also grown on polycrystalline silicon (poly-Si) seed layers prepared by an aluminium induced crystallisation (AIC) process on glass substrates. Electron Backscattering Diffraction (EBSD) shows that the film growth proceeds epitaxially on the grains of the seed layer. But a considerable higher density of extended defects is decorated by Secco etch experiments.