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  Grenzer, J.; Darowski, N.; Pietsch, U.; Daniel, A.; Rennon, S.; Reithmaier, J.P.; Forchel, A.: Grazing-incidence diffraction strain anlysis of a laterally-modulated multiquantum well system produced by focused-ion-beam implantation. Applied Physics Letters 77 (2000), p. 4277-4279

10.1063/1.1332410

Abstract:
Focused Ga⁺ ion beam implantation was used to define a laterally periodic modulation of the electronic band gap in a GaAs/ Ga_0.97In_0.03As/ Al_0.2Ga_0.8As/ GaAs [001] multiquantum well structure. The samples were investigated as-implanted and after rapid thermal annealing (60 s at 650 and 800°C) by means of x-ray grazing incidence diffraction. The method provides a separat inspection of the induced strain and the damage profiles as a function of depth below the sample surface. For samples with an ion dose of 5 × 10¹³ cm^-2 , we found a nearly uniform lateral strain amplitude of about 2 × 10^-3 up to the maximum information depth of about 500 nm. It was accompanied by the appearance of structural defects. Rapid thermal annealing at 650°C has reduced the strain amplitude by a factor of five as well as the density of voulme defects. The maximum strain amplitude was found in a depth of about 100 nm. After rapid thermal annealing at 800°C, the strain has disappeared.